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Creators/Authors contains: "Joress, Howie"

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Influence of short-range order on precipitate orientation relationships in aluminum containing FCC high entropy alloys

https://doi.org/10.1016/j.intermet.2025.108832

Anber, Elaf A; Foley, Daniel L; Hart, James L; Joress, Howie; DeCost, Brian; Doherty, Roger; Liaw, Peter K; Farkas, Diana; Frenkel, Anatoly I; Taheri, Mitra L (September 2025, Intermetallics)

Free, publicly-accessible full text available September 1, 2026
High-throughput aqueous passivation behavior of thin-film vs. bulk multi-principal element alloys in sulfuric acid

https://doi.org/10.1016/j.corsci.2024.112261

Blades, William H; Sur, Debashish; Joress, Howie; DeCost, Brian; Holcombe, Emily F; Redemann, Ben; McQueen, Tyrel M; Berlia, Rohit; Rajagopalan, Jagannathan; Taheri, Mitra L; et al (August 2024, Corrosion Science)

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Quantifying the Atomic Ordering of Binary Intermetallic Nanocatalysts Using In Situ Heating STEM and XRD

https://doi.org/10.1017/S1431927619008171

Yang, Yao; Xiong, Yin; Padgett, Elliot; Joress, Howie; Yarlagadda, Venkata; Kongkanand, Anusorn; Brock, Joel D.; DiSalvo, Francis J.; Abruña, Héctor D.; Muller, David. A. (August 2019, Microscopy and Microanalysis)

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Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering

https://doi.org/10.1116/1.5081919

Woodward, Jeffrey M.; Rosenberg, Samantha G.; Kozen, Alexander C.; Nepal, Neeraj; Johnson, Scooter D.; Wagenbach, Christa; Rowley, Andrew H.; Robinson, Zachary R.; Joress, Howie; Ludwig, Karl F.; et al (May 2019, Journal of Vacuum Science & Technology A)

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Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations

https://doi.org/10.1116/1.5080090

Rosenberg, Samantha G.; Pennachio, Daniel J.; Wagenbach, Christa; Johnson, Scooter D.; Nepal, Neeraj; Kozen, Alexander C.; Woodward, Jeffrey M.; Robinson, Zachary; Joress, Howie; Ludwig, Karl F.; et al (March 2019, Journal of Vacuum Science & Technology A)

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